Silicon Carbide
Springer Berlin
978-3-540-40458-3 (ISBN)
Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nürnberg, Germany, and has authored over 300 scientific publications.
Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction During Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC: 1997–2002.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilatio.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-Ray Topography and High Resolution X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiCWafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High Voltage SiC Devices.- Power MOSFETs in 4H-SiC: Device Design and Technology.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors.
Erscheint lt. Verlag | 8.10.2003 |
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Reihe/Serie | Advanced Texts in Physics |
Zusatzinfo | XXXIV, 899 p. In 2 volumes, not available separately. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 1410 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
Schlagworte | Crystal • crystal growth • diffraction • electron microscopy • Halbleiter • Helium-Atom-Streuung • Microscopy • Pes • semiconductor • Silicon carbide • Silicone • Silicone / Silikone • spectroscopy • Thin film • Thin Films • Transmission • Transmission Electron Microscopy |
ISBN-10 | 3-540-40458-9 / 3540404589 |
ISBN-13 | 978-3-540-40458-3 / 9783540404583 |
Zustand | Neuware |
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