Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
Seiten
2011
Trans Tech Publications Ltd (Hersteller)
978-3-03795-003-6 (ISBN)
Trans Tech Publications Ltd (Hersteller)
978-3-03795-003-6 (ISBN)
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Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine
This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
| Reihe/Serie | Advanced Materials Research ; Volume 276 |
|---|---|
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 125 x 142 mm |
| Gewicht | 200 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| ISBN-10 | 3-03795-003-X / 303795003X |
| ISBN-13 | 978-3-03795-003-6 / 9783037950036 |
| Zustand | Neuware |
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