Silicon Quantum Integrated Circuits (eBook)

Silicon-Germanium Heterostructure Devices: Basics and Realisations

E. Kasper, D.J. Paul (Autoren)

eBook Download: PDF

2005 | 2005
XII, 364 Seiten
Springer Berlin (Verlag)
978-3-540-26382-1 (ISBN)

Infos

Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Inhalt

Preface 6
Contents 9
1. Introduction 13
1.1 Microelectronics and Optoelectronics 15
1.2 From Microelectronics to Nanoelectronics 19
1.3 Self–ordering 22
1.4 Further Reading 24
2. Material Science 25
2.1 Growth and Preparation Methods ( MBE, CVD, Implantation, Annealing) 25
2.2 Segregation and Diffusion of Dopants and Alloy Materials 41
2.3 Lattice Mismatch and its Implication on Critical Thickness and Interface Structure 47
2.4 Virtual Substrates and Strain Relaxation 52
2.5 Further Reading 59
3. Resum´e of Semiconductor Physics 61
3.1 Quantum Mechanics 61
3.2 The Band Structure of Semiconductors 69
3.3 The Concentration of Carriers in a Semiconductor 83
3.4 Electronic Transport in a Semiconductor 99
3.5 Low Dimensional Physics: Quantum Wires and Dots 109
3.6 Lattice Vibrations and Phonons 113
3.7 Optical Properties of Semiconductors 119
3.8 The Continuity Equations Including Recombination and Generation 128
3.9 Further Reading 128
4. Realisation of Potential Barriers 129
4.1 Depletion layer and built in voltage 129
4.2 d-Doping and n-i-p-i Structures 131
4.3 Heterointerfaces (type I, type II), Abruptness and Height of Barriers 135
4.4 Influence of Strain on Bandstructure 146
4.5 Band Alignment of Strained SiGe 150
4.6 Further Reading 154
5. Electronic Device Principles 155
5.1 The p-n Junction 155
5.2 The Silicon Bipolar Transistor 162
5.3 Metal Oxide Semiconductor Field Effect Transistors MOSFETs 176
5.4 Further Reading 200
6. Heterostructure Bipolar Transistors - HBTs 201
6.1 Trade-off between current gain and speed 204
6.2 The High Speed SiGe HBT 205
6.3 The Linear Graded Profile 211
6.4 SiGe HBT Device Performance 214
6.5 Further Reading 218
7. Hetero Field Effect Transistors (HFETs) 219
7.1 Vertical Heterojunction MOSFETs 222
7.2 Strained-Si CMOS 223
7.3 Metal-Gated MOSFETs 230
7.4 Modulation Doped Field Effect Transistors ( MODFETs) 230
7.5 Further Reading 244
8. Tunneling Phenomena 247
8.1 Tunnel Diodes 247
8.2 Resonant Tunnelling 247
8.3 Real Space Transfer (RST) Devices 276
8.4 Single Electron Transistors and Coulomb Blockade 280
8.5 Further Reading 291
9. Optoelectronics 293
9.1 Photonic Devices 293
9.2 The Quantum Cascade Laser 308
9.3 Further Reading 321
10. Integration 323
10.1 The CMOS Inverter and MOS Memory Circuits 323
10.2 Silicon Process Technology 328
10.3 CMOS 339
10.4 Heterolayer Integration Issues 344
10.5 Bipolar and HBT Fabrication Processes 346
10.6 BiCMOS 349
10.7 Strained-Si CMOS 354
10.8 The System on a Chip 356
10.9 Fault Tolerant Architectures 356
10.10 Further Reading 358
11. Outlook 359
A. List of variables 365
B. Physical Properties of Important Materials at 300K 371
C. Fundamental Physical Constants 373

Produkt-Details

• Erscheint lt. Verlag: 11.12.2005
• Reihe/Serie: NanoScience and Technology
• Zusatzinfo: XII, 364 p.
• Verlagsort: Berlin
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie
• Themenwelt: Naturwissenschaften ► Physik / Astronomie
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Schlagworte: Electronics • Epitaxy • field-effect transistor • Heterojunction Bipolar Transistor • Integrated circuit • microelectronics • optoelectronics • Quantum effect devices • Strained layer heterostructures • Transistor
• ISBN-10: 3-540-26382-9 / 3540263829
• ISBN-13: 978-3-540-26382-1 / 9783540263821