Nanometer CMOS
Seiten
2008
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-270-709-3 (ISBN)
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-270-709-3 (ISBN)
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Gives a comprehensive overview of the important issues concerning modern Si MOSFETs. This book covers the principles of MOSFET operation, theory, scaling issues, and a discussion of nanometer MOSFETs. It treats both classical nanometer MOSFETs as well as non-classical MOSFET concepts.
This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.
This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.
Evolution and Recent Advances in Si Electronics; MOSFET Fundamentals, Theory, and Modeling; Nanometer MOSFETs; RF MOSFETs; Overview of Nanometer CMOS Technology; Challenges of Giga-Scale Integration.
| Erscheint lt. Verlag | 28.4.2008 |
|---|---|
| Verlagsort | Singapore |
| Sprache | englisch |
| Themenwelt | Mathematik / Informatik ► Informatik ► Theorie / Studium |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 981-270-709-3 / 9812707093 |
| ISBN-13 | 978-981-270-709-3 / 9789812707093 |
| Zustand | Neuware |
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